Positive photoresist composition

Abstract

The purpose of this invention is to provide a positive photoresist composition capable of forming high-resolution photoresist patterns with high sensitivity. The positive photoresist composition of this invention comprises polymer A and compound B. Polymer A is a main-chain cleaved polymer, and compound B is represented by the following formula (I), where the content of polymer A is defined as WA, and the content of compound B is defined as WB. The positive photoresist composition satisfies WA≧WB. Furthermore, in formula (I), two or more of R1 to R3 can be bonded to form a ring structure, which may also have substituents. R1 to R3 that do not form a ring structure are independently hydrogen atoms, halogen atoms, or organic groups, and may be the same or different from each other.