Resistor composition, resistor pattern formation method and polymer

Abstract

This invention employs a resist composition containing a resin component whose solubility relative to the developer is altered by the action of an acid. This resin component comprises a polymer in which a linker group represented by general formula (a0-L) forms part of the polymer backbone. In formula (a0-L), R10 represents a hydrocarbon group in which the linker group is split into two by the action of an acid. R20 and R30 each independently represent an alkyl group having 1 to 5 carbon atoms. *1 and *2 represent the bonding portions that are bonded to the polymer backbone. O is an oxygen atom. S is a sulfur atom. Based on this resist composition, high sensitivity and improved roughness reduction are achieved in the formation of the resist pattern, and film loss is further suppressed.