Precursors for imprinting underlayer films, compositions for forming imprinting underlayer films, underlayer films, patterning methods, imprinting kits, and methods for manufacturing semiconductor devices.

Abstract

The present invention provides an imprinting lower film precursor, an imprinting lower film forming composition for manufacturing the precursor, a lower film formed from the precursor, a pattern manufacturing method using the composition, an imprinting forming kit including the composition and the pattern forming composition, and a method for manufacturing a semiconductor device using a pattern obtained by the pattern manufacturing method. The imprinting lower film precursor has an australasian parameter of 2.0 to 6.0 and is formed with a film thickness of 25 to 300 nm.