Chemical mechanical polishing slurry

Abstract

The invention provides a chemical mechanical polishing slurry for semiconductor material manufacturing processes, comprising: nano α-alumina abrasive particles, a dispersant, a dispersing aid, an organic carboxylic acid, an oxidizing agent, water, and a pH adjuster. It is characterized by good dispersibility, strong stability, low particle size, and long-term stability. The invention employs the synergistic effect of an amphoteric surfactant and an anionic polymer to promote the dispersion of alumina abrasive particles in the polishing slurry through a steric hindrance stabilization mechanism, ensuring the long-term stability of the polishing slurry system without affecting tungsten polishing.