Chemical mechanical polishing slurry and use of chemical mechanical polishing slurry
TW202637790APending Publication Date: 2026-09-16ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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Patent Information
- Application Number
- TW115101359
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-28
- Filing Date
- 2026-01-14
- Publication Date
- 2026-09-16
Abstract
The present invention provides a chemical mechanical polishing (CMP) slurry comprising: abrasive particles, an organic acid, a five-membered nitrogen-containing heterocyclic compound, an oxidizer and water; wherein the abrasive particles are alumina. The CMP slurry of the present invention has high removal rate for polyimide (PI) and adjustable removal rate for copper (Cu), while achieving low surface roughness for both PI and Cu after polishing.
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