Etchant composition for etching metal nitride layer and method of forming pattern using the same

Abstract

This invention relates to an etching solution composition for etching a metal nitride layer, and a method for forming a pattern thereon. The etching solution composition comprises an oxidant, a fluorinated compound, an additive containing a carbonate-based compound, and the balance being water. The method for forming the pattern comprises: forming a metal pattern on a substrate; forming a barrier layer comprising a metal nitride and covering the metal pattern on the substrate; and etching the barrier layer using the etching solution composition.

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