Methods and assemblies for depositing transition metalcontaining films

Abstract

The present disclosure relates to methods and apparatuses for depositing transition metal - containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal halide precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form a layer comprising transition metal on the substrate. The transition metal halide precursor comprises transition metal tetrahalide.

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