Amorphpous silicon gapfill using icp plasma at low pressure and higher temperature
TW202637873APending Publication Date: 2026-09-16APPLIED MATERIALS INC
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Patent Information
- Application Number
- TW115100692
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-06-26
- Filing Date
- 2026-01-08
- Publication Date
- 2026-09-16
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Abstract
Methods and devices for forming gap fill materials on the surface of a substrate are provided herein. Embodiments include flowing a silicon-containing precursor into a process chamber at a flow rate that allows for maintaining a pressure inside the process chamber at less than
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