Metal deposition and etch by use of a substrate processing chamber

TW202637875APending Publication Date: 2026-09-16APPLIED MATERIALS INC
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Patent Information

Application Number
TW115105382
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-09-10
Filing Date
2026-02-11
Publication Date
2026-09-16

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Patent Text Reader

Abstract

An embodiment of a method includes depositing a metal silicide layer in a recessed feature defined on a substrate in a processing chamber by use of an inductively coupled plasma (ICP) assembly of the processing chamber. The recessed feature defines one or more sidewalls therein. In addition, the method includes etching the metal silicide layer off of the one or more sidewalls in the processing chamber. Further, the method includes depositing a second metal layer in the recessed feature on the metal silicide layer in the processing chamber.
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