Composite seed crystal and method for producing single crystal

Abstract

The objective of this invention is to provide a composite seed crystal that can suppress the sublimation and decomposition of the seed crystal during single crystal growth and the quality reduction of the grown crystal due to thermal stress, as well as a method for manufacturing the single crystal using this composite seed crystal. As a solution, the composite seed crystal comprises a seed crystal and a protective layer formed on a surface other than the growth surface of the seed crystal. The protective layer is formed, at least in all or part of the back surface of the seed crystal, and is composed of a shaped body, a degreased body, or a sintered body comprising at least one main powder selected from a group consisting of high-melting-point metals, high-melting-point metal carbides, high-melting-point metal nitrides, and high-melting-point metal carbonitrides, with a thickness of 50 μm to 500 μm. The method for manufacturing the single crystal comprises a first step of placing the composite seed crystal in a container for growing a single crystal, and a second step of heating the seed crystal to the growth temperature of the single crystal, supplying a raw material gas to the growth surface of the seed crystal, and growing the single crystal on the growth surface.

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