Epitaxial growth substrate and manufacturing method of epitaxial growth substrate, and semiconductor device

Abstract

An epitaxial growth substrate is provided that can impart excellent performance to optical semiconductor devices. The present invention provides an epitaxial growth substrate comprising: a offset substrate having a lattice constant ag and an offset angle θ; and a plurality of constituent tilt layers deposited in such a manner that the difference in lattice constant between the substrate and the offset substrate gradually increases from the offset substrate side, wherein the constituent tilt layer furthest from the offset substrate is used as a pseudo-substrate layer; using the lattice constant ag and the offset angle θ, the surface lattice constant ag' is calculated according to the following equation (1): ag'=ag / cosθ … (1); using the calculated surface lattice constant ag' and the lattice constant bp of the strain of the pseudo-substrate layer calculated from X-ray diffraction measurements, the mismatch degree Xαp·g is calculated to be less than 0.5% according to the following equation (2): Xαp·g=(bp-ag') / ag' … (2). The present invention also provides a method for manufacturing an epitaxial growth substrate and a semiconductor device.

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