Semiconductor chuck device and semiconductor testing system

Abstract

A semiconductor chuck device provided includes a device body, a loading portion, a first conductor, a second conductor, a first insulating layer, a grounding conductor, a heater and a temperature sensor. The device body is formed with a heat-insulating chamber. The loading portion is located outside the heat-insulating chamber and used for loading a device under test (DUT). The first conductor is located on the device body and fixedly connected to the loading portion for electrically and thermally connecting to the DUT. The second conductor is located on the device body. The first insulating layer electrically insulates the first conductor from the second conductor. The grounding conductor is located outside the heat-insulating chamber of the device body and electrically insulated the first conductor from the second conductor. The heater is located in the heat-insulating chamber and thermally connected to the second conductor to heat the DUT through the first conductor. The temperature sensor is arranged on the first conductor for sensing the temperature of the DUT.

Description

[Technical Field]

[0001] The present invention relates to a semiconductor stage device, and more particularly to a semiconductor stage device and a semiconductor testing system having the semiconductor stage device. [Previous Technology]

[0002] Conventional test chucks used for testing bare semiconductor dies are equipped with stacked structures to reduce leakage current, thereby protecting the test path and reducing noise interference, thus improving the accuracy of test results. In addition, in order to allow the test object (such as a bare semiconductor die) on the test chuck to be tested under different temperature conditions, the stacked structure is equipped with temperature control measures for the test object.

[0003] However, when the test object on the test chuck is heated, the heat energy will be lost in the air due to radiation or convection during the conduction process, which will cause the test object on the test chuck to be unable to be effectively controlled by temperature.

[0004] It is evident that the aforementioned technology still has inconveniences and shortcomings, and needs further improvement. Therefore, how to effectively solve the aforementioned inconveniences and shortcomings is indeed one of the important research and development topics at present, and has also become a target that urgently needs to be improved in the relevant fields. [Summary of the Invention]

[0005] One object of the present invention is to provide a semiconductor stage device and a semiconductor testing system to solve the difficulties mentioned in the prior art.

[0006] One embodiment of the present invention provides a semiconductor stage device. The semiconductor stage device includes a device body, a support portion, a first conductor, a second conductor, a first insulating layer, a grounding conductor, a heater, and a temperature sensor. The device body has a heat-insulating chamber. The support portion is located outside the heat-insulating chamber and is used to support a test object. The first conductor is located on the device body and is fixedly connected to the support portion for electrical and thermal connection to the test object. The second conductor is located on the device body. The first insulating layer is located between the first conductor and the second conductor and electrically insulates the first conductor and the second conductor. The grounding conductor is located outside the heat-insulating chamber and is electrically insulated from the first conductor and the second conductor for electrical connection to a grounding structure. The heater is located inside the heat-insulating chamber and is thermally connected to the second conductor for heating the test object through the first conductor. The temperature sensor is disposed on one of the support portion and the first conductor for sensing the temperature of the test object.

[0007] According to one or more embodiments of the present invention, the semiconductor stage device further includes a second insulating layer. The second insulating layer is laminated between the heater and the second conductor, and thermally connects the heater and the second conductor.

[0008] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the heater is located between the second insulating layer and the heat-conducting medium, and the thermal conductivity of the heat-conducting medium is less than that of the second insulating layer.

[0009] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the heater has a first side and a second side opposite to each other, the first side of the heater is directly connected to the second insulating layer, and there is an air gap between the second side of the heater and the inner wall of the heat insulation chamber.

[0010] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the device body includes an insulating container and an outer cover. A receiving groove is recessed on one side of the insulating container. The outer cover is fixed between the first conductor and the second conductor, and covers the insulating container and the receiving groove, such that the insulating container, the outer cover, and the receiving groove together form the heat-insulating chamber, and the second conductor is located in the heat-insulating chamber.

[0011] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the outer cover includes a cover body, a surrounding body, and a through-hole. The surrounding body protrudes from one side of the cover body and surrounds a slot. The through-hole is located at the bottom of the slot and penetrates the cover body. A first insulating layer is fitted into the through-hole, and a first conductor is fitted into the slot and directly contacts the first insulating layer.

[0012] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the first conductor is fixed to the cover by a first bolt, the second conductor is fixed to the cover by a second bolt, and the heater is fixed to the second insulating layer and the second conductor by a third bolt.

[0013] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the first conductor includes a plate, a raised portion, a recessed portion, and a vacuum pipe. The plate is fixed to the device body. The raised portion is fixed to the front side of the plate, and a supporting portion is fixed to the front side of the plate, surrounding the raised portion, and forming a storage groove between the supporting portion and the raised portion, the storage groove being used to place the object to be tested. The recessed portion is recessed in the side of the raised portion opposite to the heater, and is located within the storage groove. The vacuum pipe is formed within the raised portion, one end of the vacuum pipe is exposed within the recessed portion, and the other end is used to connect to a vacuum source device.

[0014] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the second conductor is located in the heat insulation chamber and is located between the heater and the first conductor.

[0015] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the heater and the second conductor are physically separated, and an air gap exists between the heater and the second conductor. The heater is a hot air supply device for emitting hot air to the second conductor through the air gap.

[0016] One embodiment of the present invention provides a semiconductor stage device. The semiconductor stage device includes an insulating container, a stacked structure, a grounding conductor, a heater, and a temperature sensor. A receiving groove is recessed on one side of the insulating container. The stacked structure includes a support portion, a first conductor, a second conductor, and a first insulating layer. The first conductor covers the insulating container and the receiving groove, such that the insulating container and the first conductor together form a heat-insulating chamber. The support portion is located on the first conductor and is used to support a test object. The second conductor is located within the heat-insulating chamber. The first insulating layer is locked between the first conductor and the second conductor and electrically insulates the first conductor and the second conductor. The grounding conductor is located outside the heat-insulating chamber and electrically insulates the first conductor and the second conductor, and is used to electrically connect to a grounding structure. The heater is located within the heat-insulating chamber and thermally connected to the second conductor, and is used to heat the test object through the stacked structure. The temperature sensor is disposed on one of the support portion and the first conductor and is used to sense the temperature of the test object.

[0017] According to one or more embodiments of the present invention, the semiconductor stage device further includes a second insulating layer. The second insulating layer is laminated between the heater and the second conductor, and thermally connects the heater and the second conductor.

[0018] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the heater has a first side and a second side opposite to each other, the first side of the heater is directly connected to the second insulating layer, and there is an air gap between the second side of the heater and the inner wall of the heat insulation chamber.

[0019] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the second conductor is located between the heater and the first conductor.

[0020] According to one or more embodiments of the present invention, in the above-described semiconductor stage device, the heater and the second conductor are physically separated, and there is an air gap between the heater and the second conductor. The heater is a hot air supply device for emitting hot air to the second conductor through the air gap.

[0021] One embodiment of the present invention provides a semiconductor testing system, comprising a power supply device, a probe card device, a control device, and the aforementioned semiconductor stage device. The power supply device is electrically connected to a first conductor, a second conductor, and a ground conductor of the aforementioned semiconductor stage device, for inputting approximately the same voltage to the first conductor and the second conductor respectively. The probe card device is movably located above the semiconductor stage device, and the probe card device includes a circuit board and a plurality of probes disposed on the circuit board for contacting the object under test. The control device is electrically connected to the probe card device, the power supply device, a heater, and a temperature sensor, for controlling the probe card device, the power supply device, the heater, and the temperature sensor to operate accordingly.

[0022] Thus, through the above architecture, the semiconductor stage device and semiconductor testing system of the present invention can effectively transfer heat energy to the test object, allowing the test object to be accurately subjected to electrical testing at a specific temperature, thereby achieving the purpose of reducing heat loss, precise temperature control and low leakage current.

[0023] The above description is only used to illustrate the problem to be solved by the present invention, the technical means to solve the problem, and the effects produced, etc. The specific details of the present invention will be described in detail in the following embodiments and related figures.

Implementation Method

[0024] Several embodiments of the present invention will be described below with reference to the drawings. For clarity, many practical details will be described in the following description. However, it should be understood that these practical details are not intended to limit the present invention. That is, these practical details are not essential in the various embodiments of the present invention. In addition, for the sake of simplicity, some conventional structures and elements will be shown in the drawings in a simple schematic manner.

[0025] Figure 1 is a schematic diagram of a semiconductor stage device 10 according to an embodiment of the present invention. As shown in Figure 1, in this embodiment, a semiconductor stage device 10 includes a device body 100, a stacked structure 200, a grounding conductor 600 (shielding), a heater 700, and a temperature sensor 800. The device body 100 includes an insulating container 110. The insulating container 110 has a top surface 111 and a bottom surface 112 that are opposite to each other. A receiving groove 113 is recessed in the top surface 111 of the insulating container 110. The stacked structure 200 is partially located within the receiving groove 113, and includes a support portion 210, a first conductor 220 (Force), a second conductor 300 (Guard), a first insulating layer 400, and a second insulating layer 500. The support portion 210, the first conductor 220, the first insulating layer 400, the second conductor 300, and the second insulating layer 500 of the stacked structure 200 are sequentially stacked with the heater 700 along a vertical direction (e.g., the Z-axis). The first conductor 220 covers the receiving groove 113, such that the insulating container 110 and the first conductor 220 together form a heat-insulating chamber 150. The grounding conductor 600 is located outside the heat-insulating chamber 150, fixed to the bottom surface 112 of the insulating container 110, and electrically insulates the first conductor 220 and the second conductor 300, for electrically connecting a grounding structure (not shown in the figure). The heater 700 is located inside the heat-insulating chamber 150 and is thermally connected to the second conductor 300, enabling indirect heating of the test object (DUT) through the stacked structure 200. The temperature sensor 800 is disposed on the carrier portion 210 to sense the temperature of the test object (DUT).

[0026] Furthermore, the carrier portion 210 is located on the first conductor 220 and outside the receiving groove 113, and the carrier portion 210 has a placement groove 211 for holding the test object (DUT) (e.g., a semiconductor bare die). The second conductor 300 is located in the heat insulation chamber 150 and is located between the heater 700 and the first conductor 220. The first insulating layer 400 is located in the heat insulation chamber 150, fixed between the first conductor 220 and the second conductor 300, thermally connecting the first conductor 220, the second conductor 300, the carrier portion 210 and the test object (DUT), and electrically insulating the first conductor 220 and the second conductor 300. The second insulating layer 500 is located in the heat insulation chamber 150, stacked between the heater 700 and the second conductor 300, and thermally connecting the heater 700 and the second conductor 300. More specifically, in this embodiment, the second insulating layer 500 is locked between the second conductor 300 and the heater 700.

[0027] Furthermore, in this embodiment, the heater 700 is located between the second insulating layer 500 and the heat-conducting medium, and the thermal conductivity of the heat-conducting medium is less than that of the second insulating layer 500. The heat-conducting medium may be, for example, Teflon or air, and the second insulating layer 500 may be, for example, aluminum nitride, Teflon, etc. However, the present invention is not limited thereto. Therefore, compared to downward heat transfer to the grounding conductor 600, the heat energy of the heater 700 can be more quickly transferred to the test object (DUT) through the second insulating layer 500, the second conductor 300, the first insulating layer 400, and the first conductor 220.

[0028] For example, in this embodiment, the heater 700 has a first side 711 and a second side 712 opposite to each other. The first side 711 of the heater 700 is directly connected to the second insulating layer 500. The second side 712 and the other sides of the heater 700 have a first air gap G1 between them and the inner wall 151 of the heat insulation chamber 150.

[0029] In this embodiment, the first conductor 220, the second conductor 300 and the grounding conductor 600 are all conductive metal layers (e.g., copper sheets), the insulating container 110 is a low thermal conductivity and electrical insulating element (e.g., Teflon); and / or the first insulating layer 400 and the second insulating layer 500 are respectively rigid sheets, which are, for example, high thermal conductivity and electrical insulating elements (e.g., aluminum nitride, Teflon, etc.). However, the present invention is not limited thereto.

[0030] In addition, in other embodiments, the first conductor 220 may be replaced by being located between the heater 700 and the second conductor 300; the first insulating layer 400 and the second insulating layer 500 may also be soft sheets (e.g., high thermal conductivity foam, multi-porous foam); as long as the temperature of the test object DUT can be effectively sensed, the temperature sensor 800 may also be replaced by being located on the first conductor 220.

[0031] Figure 2 is a schematic diagram of a semiconductor stage device 11 according to an embodiment of the present invention. As shown in Figure 2, the semiconductor stage device 11 of this embodiment is generally the same as the semiconductor stage device 10 of the above embodiment. The difference is that the stacked structure 201 of this embodiment omits the second insulating layer 500, and the carrier portion 210, the first conductor 220, the first insulating layer 400 and the second conductor 300 of the stacked structure 201 are solidly stacked in sequence along the vertical direction (such as the Z-axis), and the heater 701 and the second conductor 300 are solidly separated, that is, there is a second air gap G2 between the first side surface 711 of the heater 701 and the second conductor 300.

[0032] For example, the heater 701 is a hot air supply device (such as a hair dryer), fixed to the inner wall 151 of the heat insulation chamber 150, and emits hot air to the second conductor 300 through the second air gap G2. Therefore, the heat energy of the hot air from the heater 701 can be sequentially transferred from the second conductor 300, the second insulating layer 500, and the first conductor 220 to the test object DUT (such as a semiconductor bare crystal).

[0033] Figure 3 is a perspective view of a semiconductor stage device 12 according to an embodiment of the present invention. Figure 4 is an exploded view of the semiconductor stage device 12 in Figure 3. Figure 5 is a cross-sectional view of the semiconductor stage device 12 in Figure 3 along line segment AA.

[0034] As shown in Figures 3 to 5, the semiconductor stage device 12 of this embodiment is substantially the same as the semiconductor stage device 10 in Figure 1 above. The difference is that, in this embodiment, the device body 100 further includes an outer cover 120, and the outer cover 120 covers the insulating container 110 and the receiving groove 113, and is not the first conductor 220, so that the insulating container 110, the outer cover 120 and the receiving groove 113 together form the aforementioned heat insulation chamber 150. The outer cover 120 is fixed between the first conductor 220 and the second conductor 300, and the first conductor 220 is located outside the heat insulation chamber 150, while the second conductor 300 is located inside the heat insulation chamber 150.

[0035] More specifically, the outer cover 120 includes a cover body 130, a surrounding body 140, and a through opening 142. The cover body 130 has a first surface 131 and a second surface 132 facing each other. The surrounding body 140 protrudes from the first surface 131 of the cover body 130 and surrounds a slot 141. The through opening 142 is located at the bottom of the slot 141 and penetrates the first surface 131 and the second surface 132 of the cover body 130. The shape and size of the first insulating layer 400 are substantially the same as the shape and size of the through opening 142, and the first insulating layer 400 is fitted into the through opening 142. The shape and size of the first conductor 220 are substantially the same as the shape and size of the slot 141, and the first conductor 220 is fitted into the slot 141 and directly contacts the first insulating layer 400. The shape and size of the second conductor 300 are approximately the same as those of the second surface 132 of the cover 130, and the second conductor 300 is directly attached to the second surface 132 of the cover 130 and directly contacts the second surface 132 of the cover 130 and the second insulating layer 500.

[0036] Furthermore, the first conductor 220 is secured to the slot 141 of the cover 130 by several first bolts B1, the second conductor 300 is secured to the second surface 132 of the cover 130 by several second bolts B2, and the heater 700 is secured to the second insulating layer 500 and the second conductor 300 by several third bolts B3.

[0037] The heater 700 includes a housing 710 and a plurality of heating rods 720. The housing 710 is secured to the second conductor 300 by the third bolt B3. The heating rods 720 are spaced apart within the housing 710 to generate heat within the housing 710, thereby allowing the heat energy of the heating rods 720 to be sequentially transferred to the test object DUT (Figure 1) through the housing 710, the second insulating layer 500, the second conductor 300, the first insulating layer 400, and the first conductor 220, and each heating rod 720 extends into the housing 710 through the insulating container 110 in a horizontal direction (such as the X-axis).

[0038] Furthermore, the first conductor 220 is plate-shaped, comprising a plate body 230, a raised portion 240, a recessed portion 241, and a contact block 250. The plate body 230 is fixed within the slot 141 of the outer cover 120. The plate body 230 includes a front side 231 and a back side 232 facing each other, and the raised portion 240 is fixed to the front side 231 of the plate body 230. The supporting portion 210 is fixed to the front side 231 of the plate body 230, surrounds the raised portion 240, and forms the storage groove 211 between the supporting portion 210 and the raised portion 240. The recessed portion 241 is recessed in the side of the raised portion 240 facing away from the heater 700 and is located within the storage groove 211 (Figures 3 and 4). The contact block 250 is embedded in the recess of the back side 232 of the plate body 230 and directly contacts the first insulating layer 400 (Figure 5).

[0039] The first conductor 220 further includes at least one vacuum conduit 260. The vacuum conduit 260 is formed within the protrusion 240, with one end exposed within the recess 241 and the other end used to connect to a vacuum source device (not shown). The vacuum conduit 260 includes a first segment 261 and at least one second segment 262 that are orthogonal to each other and connected. The first segment 261 is formed within the plate 230 and extends from the vacuum source device toward the protrusion 240 in another horizontal direction (e.g., the Y-axis). Each second segment 262 is formed within the protrusion 240 and extends from the first segment 261 toward the recess 241 in a vertical direction (e.g., the Z-axis).

[0040] Furthermore, Figure 6 is a cross-sectional view of the semiconductor stage device 12 in Figure 3 along line segment BB. As shown in Figure 6, the first conductor 220 further includes a configuration conduit 270, which is embedded in the plate 230 and the protrusion 240. The configuration conduit 270 extends in the protrusion 240 in a vertical direction (such as the Z-axis) and extends toward the recess 241, approaching the recess 241 but not passing through it. A temperature sensor 800 is disposed at the end of the configuration conduit 270 to sense the temperature of the test object DUT (Figure 1) in the storage slot 211.

[0041] Furthermore, as shown in Figures 4 and 5, the receiving groove 113 of the insulating container 110 has two opposing support flanges 114. These support flanges 114 protrude from the inner wall of the receiving groove 113 to support the outer cover 120 in the groove of the receiving groove 113, and the outer cover 120 is placed on the support flanges 114 through the second conductor 300.

[0042] Figure 7 is a schematic diagram of a semiconductor testing system 900 according to an embodiment of the present invention. As shown in Figures 3 and 7, the testing system 900 includes a power supply device 910, a probe card device 920, a control device 940, and a semiconductor stage device 930. The semiconductor stage device 930 in this embodiment can be the same as the semiconductor stage devices 10-12 in the above embodiments, and will not be described again here. The power supply device 910 is electrically connected to the first conductor 220, the second conductor 300, and the ground conductor 600 of the semiconductor stage device 930. More specifically, the power supply device 910 is electrically connected to the first conductor 220 through wire L1 and to the second conductor 300 through wire L2 (Figure 3). The probe card device 920 is movably located above the semiconductor stage device 930, and the probe card device 920 includes a circuit board 921 and a plurality of probes 922. These probes 922 are disposed on the circuit board 921 for contacting the device under test (DUT). The control device 940 is electrically connected to the probe card device 920, the power supply device 910, the heater 700, and the temperature sensor 800, and is used to control the corresponding operation of the probe card device 920, the power supply device 910, the heater 700, and the temperature sensor 800. The control device 940 is, for example, a computer device or other similar device. However, the invention is not limited thereto.

[0043] Therefore, when the control device 940 moves the probe card device 920 down to the semiconductor stage device 930, so that the probe 922 of the probe card device 920 contacts the device under test (DUT) on the semiconductor stage device 930, the probe card device 920 begins to perform electrical detection on the device under test (DUT) on the semiconductor stage device 930.

[0044] At this time, when the control device 940 allows the power supply device 910 to input currents from the first conductor 220 and the second conductor 300 with approximately the same voltage to generate a very small voltage difference, the semiconductor stage device 930 forces the very small voltage difference current to flow out from the first insulating layer 400 between the first conductor 220 and the second conductor 300.

[0045] In addition, during the test, the control device 940, in response to the feedback signal from the temperature sensor 800, allows heat energy to be sequentially transferred to the test object DUT through the heater 700 in the heat insulation chamber 150 via the outer casing 710, the second insulating layer 500, the second conductor 300, the first insulating layer 400 and the first conductor 220, thereby providing more accurate temperature control for the test object DUT.

[0046] Thus, through the above architecture, the semiconductor stage device and semiconductor testing system of the present invention can effectively transfer heat energy to the test object, allowing the test object to be accurately subjected to electrical testing at a specific temperature, thereby achieving the purpose of reducing heat loss, precise temperature control and low leakage current.

[0047] Finally, the embodiments described above are not intended to limit the present invention. Any person skilled in the art can make various modifications and refinements without departing from the spirit and scope of the present invention, and all such modifications and refinements are protected under the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims. [Simplified Explanation of the Diagram]

[0048] To make the above and other objects, features, advantages and embodiments of the present invention more apparent and understandable, the accompanying drawings are described below: Figure 1 is a schematic diagram of a semiconductor stage device according to an embodiment of the present invention. Figure 2 is a schematic diagram of a semiconductor stage device according to an embodiment of the present invention. Figure 3 is a perspective view of a semiconductor stage device according to an embodiment of the present invention. Figure 4 is an exploded view of the semiconductor stage device in Figure 3. Figure 5 is a cross-sectional view of the semiconductor stage device in Figure 3 along line segment AA. Figure 6 is a cross-sectional view of the semiconductor stage device in Figure 3 along line segment BB. Figure 7 is a schematic diagram of a semiconductor testing system according to an embodiment of the present invention. [Biomaterial Storage]

[0050] Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None.

Claims

1. A semiconductor stage device, comprising: a device body including an insulating container and an outer cover, wherein one side of the insulating container is recessed with a receiving groove, and the outer cover covers the insulating container and the receiving groove, such that the insulating container, the outer cover and the receiving groove together form a heat-insulating chamber; a support portion located outside the heat-insulating chamber for supporting a test object; a first conductor located on the device body and fixedly connected to the support portion for electrically and thermally connecting the test object; a second conductor located on the device body and within the heat-insulating chamber, wherein the outer cover is fixed between the first conductor and the second conductor; a first insulating layer located between the first conductor and the second conductor and electrically insulating the first conductor and the second conductor; and a grounding conductor located outside the heat-insulating chamber and electrically insulating the first conductor and the second conductor for electrically connecting a grounding structure. A heater, located in the heat-insulating chamber, is thermally connected to the second conductor for heating the object under test through the first conductor; and a temperature sensor, disposed in either the carrier or the first conductor, is used to sense the temperature of the object under test.

2. The semiconductor stage device as claimed in claim 1 further comprises: a second insulating layer superimposed between the heater and the second conductor, and thermally connecting the heater and the second conductor.

3. The semiconductor stage apparatus as claimed in claim 2, wherein the heater is located between the second insulating layer and a thermally conductive medium, wherein the thermal conductivity of the thermally conductive medium is less than the thermal conductivity of the second insulating layer.

4. The semiconductor stage device as claimed in claim 2, wherein the heater has a first side and a second side opposite to each other, the first side of the heater being directly connected to the second insulating layer, and an air gap being formed between the second side of the heater and the inner wall of the heat insulation chamber.

5. The semiconductor stage device as claimed in claim 2, wherein the outer cover comprises: a cover body; a surrounding body protruding from one side of the cover body and surrounding a slot; and a through opening located at the bottom of the slot and penetrating the cover body, wherein the first insulating layer is fitted into the through opening, and the first conductor is fitted into the slot and directly contacts the first insulating layer.

6. The semiconductor stage device as claimed in claim 5, wherein the first conductor is secured to the cover by a first bolt, the second conductor is secured to the cover by a second bolt, and the heater is secured to the second insulating layer and the second conductor by a third bolt.

7. The semiconductor stage device as claimed in claim 1, wherein the first conductor comprises: a plate fixed to the device body; a raised portion fixed to the front side of the plate, wherein the supporting portion is fixed to the front side of the plate, surrounds the raised portion, and forms a storage groove between the supporting portion and the raised portion, the storage groove being used to place the object to be tested; a recessed portion recessed in the raised portion on the side opposite to the heater and located in the storage groove; and an exhaust pipe formed in the raised portion, one end of the exhaust pipe being exposed in the recessed portion, and the other end being used to connect to a vacuum source device.

8. The semiconductor stage apparatus as claimed in claim 1, wherein the second conductor is located within the heat-insulating chamber and is positioned between the heater and the first conductor.

9. The semiconductor stage apparatus as claimed in claim 1, wherein the heater and the second conductor are physically separated and an air gap is provided between the heater and the second conductor, wherein the heater is a hot air supply device for emitting hot air to the second conductor through the air gap.

10. A semiconductor stage device, comprising: an insulating container having a recessed receiving groove on one side; an outer cover covering the insulating container and the receiving groove; a stacked structure including a support portion, a first conductor, a second conductor, and a first insulating layer, the first conductor covering the insulating container and the receiving groove such that the insulating container and the first conductor together form a heat-insulating chamber, the support portion being located on the first conductor for supporting a test object, the second conductor being located within the heat-insulating chamber, the first insulating layer being locked between the first conductor and the second conductor and electrically insulating the first conductor and the second conductor, wherein the outer cover is fixed between the first conductor and the second conductor; and a grounding conductor located outside the heat-insulating chamber and electrically insulating the first conductor and the second conductor for electrically connecting to a grounding structure; A heater, located in the heat-insulating chamber and thermally connected to the second conductor, is used to heat the object under test through the composite structure; and a temperature sensor, disposed in one of the carrier and the first conductor, is used to sense the temperature of the object under test.

11. The semiconductor stage device as claimed in claim 10 further comprises: a second insulating layer laminated between the heater and the second conductor, and thermally connecting the heater and the second conductor.

12. The semiconductor stage device as claimed in claim 11, wherein the heater has a first side and a second side opposite to each other, the first side of the heater being directly connected to the second insulating layer, and an air gap being formed between the second side of the heater and the inner wall of the heat-insulating chamber.

13. The semiconductor stage apparatus as claimed in claim 11, wherein the second conductor is located between the heater and the first conductor.

14. The semiconductor stage apparatus as claimed in claim 10, wherein the heater and the second conductor are physically separated and an air gap is provided between the heater and the second conductor, wherein the heater is a hot air supply device for emitting hot air to the second conductor through the air gap.

15. A semiconductor testing system comprising: a semiconductor stage device as described in any one of claims 1 to 14; a power supply device electrically connected to the first conductor, the second conductor, and the ground conductor for inputting approximately the same voltage to the first conductor and the second conductor respectively; a probe card device movably located above the semiconductor stage device, including a circuit board and a plurality of probes disposed on the circuit board for contacting the object under test; and a control device electrically connected to the probe card device, the power supply device, the heater, and the temperature sensor for controlling the probe card device, the power supply device, and the heater to operate accordingly.

Images