Semiconductor device with air gap and support pattern

Abstract

A semiconductor device includes a bit line extending in a first direction, a word line extending in a second direction intersecting the first direction, a plurality of semiconductor patterns on the bit line and extending in a third direction orthogonal to the first direction and the second direction and spaced apart from each other, a plurality of connection structures respectively disposed on corresponding semiconductor patterns among the plurality of semiconductor patterns, a support pattern between the connection structures, and an air gap below the support pattern. Each of the connection structures comprises a storage node contact and a protection pattern in contact with a sidewall of the storage node contact. A level of a bottom surface of the protection pattern is higher than a level of a bottommost surface of the storage node contact.

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