Ion implantation system and method of measuring and optimizing dose rate variation in an ion implantation system

Abstract

A method of measuring and optimizing dose rate variation in an ion implantation system, the method including generating a scanned beam according to a beam recipe provided to the ion implantation system, moving a profiler head across the scanned beam, the profiler head including a current sensing array including at least one current sensing device adapted to measure a dose rate of the scanned beam for generating a scanned beam profile of the scanned beam, identifying peak current values across the scanned beam profile and deriving a first dose rate profile therefrom, comparing at least one metric associated with the first dose rate profile to at least one corresponding dose rate variation target to determine whether the first dose rate profile is sufficiently uniform, and if the first dose rate profile is not sufficiently uniform, adjusting settings of the beam shaping components so that the scanned beam has a second dose rate profile that is more uniform than the first dose rate profile.

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