Ion beam implantation system and method for adjusting ion beam

TW202638479APending Publication Date: 2026-09-16APPLIED MATERIALS INC
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Patent Information

Application Number
TW114138444
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-04
Filing Date
2025-10-03
Publication Date
2026-09-16

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Abstract

Ion beam implantation systems, devices, and methods for adjusting an ion beam. An ion beam implantation system includes a shutter component configured to adjust an ion beam received from an ion beam source and being incident on a wafer plane. The system includes a controller component communicatively coupled to the shutter component. The controller is configured to receive an ion beam implantation recipe and change a size of an aperture of the shutter component based the ion beam implantation recipe and one or more measurements of the ion beam.
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