Plasma immersion ion implantation equipment using liquid or solid precursors without carrier gas
TW202638487APending Publication Date: 2026-09-16ION BEAM SERVICES
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Patent Information
- Application Number
- TW115108592
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-11
- Filing Date
- 2026-03-09
- Publication Date
- 2026-09-16
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Figure TWG2TA001077331_001 
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Abstract
A system (SYS1; SYS2) for implanting an ion species by plasma immersion, the system employing a vapor of a precursor of the ion species from a vessel containing the precursor in liquid or solid form, the device comprising: an implantation chamber (IC) configured to accommodate the semiconductor substrate (SUB); a plasma source (PS) configured to form a plasma from the precursor vapor and to operate at precursor vapor mass flow rates of less than
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