Methods for forming fine patterned areas

TW202638544APending Publication Date: 2026-09-16SCIVAX CORP
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Patent Information

Application Number
TW115103672
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-28
Filing Date
2026-01-29
Publication Date
2026-09-16

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Abstract

The objective of this invention is to form multiple regions with fine patterns on a workpiece at low cost and with ease. A method for forming multiple regions 12 with fine patterns 11 on a workpiece 1 comprises: a first mask layer forming step, forming a first mask layer 2 on the workpiece 1; a first mask pattern forming step, forming a first mask pattern 21 on the first mask layer 2 using an embossing method; a second mask layer forming step, forming a second mask layer 4 on the first mask layer 2 where the first mask pattern 21 has been formed; a second mask pattern forming step, forming a second mask pattern 41 on the second mask layer 4 using a photolithography method; and a fine pattern region forming step, forming multiple regions 12 with fine patterns 11 on the workpiece 1 using the first mask pattern 21 and the second mask pattern 41.
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