Semiconductor device and method for forming the same

Abstract

A semiconductor device includes first, second, third, fourth, and fifth active regions extending lengthwise along a first direction. The first and fifth active regions extend completely across a first cell and an adjacent second cell. The second, third, and fourth active regions extend partially across the first and second cells and are disposed between the first and fifth active regions along a second direction. The device includes a first gate stack engaging the first and second active regions and second and third gate stacks engaging the fourth and fifth active regions. The second gate stack extends in the second direction between the first and the third gate stacks. A spacing between the first gate stack and the second gate stack spans a first distance, a spacing between the second gate stack and the third gate stack spans a second distance, and the second distance is greater than the first distance.

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