Semiconductor device and method for fabricating thereof

TW202638727APending Publication Date: 2026-09-16NAN YA TECH
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Patent Information

Application Number
TW114118961
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-11
Filing Date
2025-05-20
Publication Date
2026-09-16

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Abstract

A method of fabricating a semiconductor device that includes forming an opening in a substrate layer; forming a semiconductor layer lining the opening of the substrate layer; forming a first dielectric layer lining the semiconductor layer, in which the first dielectric layer is formed with a first temperature and a first hydrogen (H2) concentration; and forming a second dielectric layer on the first dielectric layer and filling the opening, in which the second dielectric layer is formed with a second temperature different from the first temperature and a second hydrogen (H2) concentration different from the first hydrogen (H2) concentration.
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