Semiconductor devices and manufacturing methods thereof

Abstract

This invention provides a semiconductor device capable of suppressing leakage current and a method for manufacturing the same. The semiconductor device based on this embodiment includes a first structure and a second structure. The first structure has a plurality of first semiconductor elements disposed thereon. The second structure is deposited on the first structure. The second structure includes: a substrate, including a first surface and a second surface located opposite to the first surface; a first well region disposed on the first surface side of the substrate and having a first conductivity type; a second well region disposed adjacent to the first well region on the first surface side of the substrate and having a second conductivity type; and a first impurity layer disposed at least on the second surface side of the first well region and having an impurity concentration higher than that of the first well region, and having a first conductivity type. A first conductor is disposed between the first structure and the second structure, electrically isolated from the substrate.

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