Semiconductor devices and manufacturing methods thereof

Abstract

An embodiment provides a semiconductor device that can be preferably manufactured and a method for manufacturing the same. The semiconductor device of this embodiment includes a first wafer (CM) and a second wafer (CP) bonded together. The first wafer includes: a first insulating layer (202) bonded to the second wafer; and a via contact electrode (v1) penetrating the first insulating layer and extending along a first direction (Z). The second wafer includes: a second insulating layer (221); and a wiring (d4) whose side in a second direction (X) is covered by the second insulating layer and bonded to the via contact electrode. Furthermore, in the area where the wiring and the via contact electrode overlap when viewed from the first direction, an insulating layer (222) comprising silicon (Si), carbon (C), and nitrogen (N) is disposed between the wiring and the via contact electrode.

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