Memory elements

Abstract

Improving the yield of memory devices. One embodiment of a memory device includes: a semiconductor layer; a first wiring layer arranged separately from the semiconductor layer in a first direction without being separated by other wiring layers; a plurality of second wiring layers located on the opposite side of the semiconductor layer relative to the first wiring layer and arranged separately in the first direction; a plurality of memory pillars extending in the first direction and connected to the semiconductor layer, the portions intersecting with each of the plurality of second wiring layers functioning as memory cells; and a member extending in a first surface including the first direction and a second direction intersecting the first direction, dividing the first wiring layer and the plurality of second wiring layers upward at a third direction intersecting the first direction and the second direction respectively. The member includes: a filler material having two ends in the first direction and extending in the first surface further from the semiconductor layer side of the first wiring layer than the semiconductor layer side of the first wiring layer; and an insulating material disposed between the filler material and the semiconductor layer, the first wiring layer and the plurality of second wiring layers respectively, having a lower thermal conductivity than the filler material.

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