Semiconductor memory devices and methods for manufacturing semiconductor memory devices

Abstract

An embodiment provides a semiconductor memory device that can improve the crystallinity of a channel layer and a method for manufacturing the semiconductor memory device. The semiconductor memory device of the embodiment includes: a stacked body in which a plurality of conductive layers and a plurality of insulating layers are alternately stacked; and a pillar extending within the stacked body in the stacking direction; and the pillar includes: a first semiconductor layer extending within the stacked body in the stacking direction; a second semiconductor layer disposed above the first semiconductor layer; and a third semiconductor layer disposed between the first and second semiconductor layers; and the second semiconductor layer includes at least one additive of carbon, nitrogen, oxygen, and fluorine.

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