Semiconductor device, packaged device and methods of formation

Abstract

An inductive device is manufactured to include a magnetic film scheme that increases the performance of the inductive device by increasing saturation current of the inductive device, decreasing hysteresis loss of the inductive device, and / or decreasing eddy current loss of the inductive device, among other examples. The inductive device may include a magnetic layer that includes a combination of metal elements that is doped with boron (B) to achieve low coercivity (Hc– resistance to becoming demagnetized) in the magnetic layer, which enables low hysteresis loss to be achieved for the inductive device. Additionally and / or alternatively to the combination of metal elements and boron doping, the magnetic layer may be doped with additional dopants such as nitrogen (N) and / or carbon (C) to increase the magnetic anisotropy of the magnetic layer and / or to increase the resistivity of the magnetic layer.

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