IGBT devices with power clamping function and their manufacturing methods

Abstract

The present invention discloses an IGBT device with power clamping function and its manufacturing method. The IGBT device comprises a P region, an N-type buffer region, an N-drift region, a P-type body region, an N+region, a P+region, a front trench gate structure, a collector metal, and an emitter metal; The collector metal is connected to an SBR trench gate structure, which is used to suppress the reduction of resistance in the drift region when there is a large induced voltage surge. In the present invention, by adding an SBR trench gate structure connected to the collector metal on the IGBT device, the reduction in resistance of the drift region can be limited when subjected to large voltage surges, thereby avoiding a significant increase in current flowing through it and improving the service life of IGBT devices under such harsh operating conditions.

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