Power transistor and manufacturing method thereof

TW202638754APending Publication Date: 2026-09-16王佩如
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Patent Information

Application Number
TW114109328
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-13
Publication Date
2026-09-16

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Abstract

A method for manufacturing a power transistor includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate includes a first epitaxial layer and a second epitaxial layer, the second epitaxial layer is pre-configured on the first epitaxial layer to serve as an electronic component layer of the power transistor; and etching the second epitaxial layer and the first epitaxial layer to form a protection zone substrate and an electronic component layer substrate having at least one trench.
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Citation Information

Cited By

  • Power transistor and manufacturing method thereof

    EP4808306A1