Power transistor and manufacturing method thereof

TW202638756APending Publication Date: 2026-09-16王佩如
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW115113584
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-13
Publication Date
2026-09-16

Smart Images

  • Figure TWG2TA001077368_001
    Figure TWG2TA001077368_001
  • Figure TWG2TA001077368_002
    Figure TWG2TA001077368_002
  • Figure TWG2TA001077368_003
    Figure TWG2TA001077368_003
Patent Text Reader

Abstract

A method for manufacturing a power transistor includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate includes a first epitaxial layer and a second epitaxial layer, the second epitaxial layer is pre-configured on the first epitaxial layer to serve as an electronic component layer of the power transistor; and etching the second epitaxial layer and the first epitaxial layer to form a protection zone substrate and an electronic component layer substrate having at least one trench.
Need to check novelty before this filing date? Find Prior Art