Semiconductor device and method of forming the same

Abstract

An exemplary method includes forming a channel region comprising a plurality of nanostructures over a substrate, forming an isolation feature over the substrate and adjacent to a sidewall of the channel region, forming a gate structure over the channel region and interfacing a top surface of the isolation feature. The forming of the gate structure comprises depositing a gate dielectric layer over the plurality of nanostructures and the isolation feature, depositing a p-type work function metal layer over the gate dielectric layer, partially removing a portion of the gate dielectric layer and p-type work function metal layer over the isolation feature, after the partially removing, soaking the p-type work function metal layer using a silicon-containing gas, depositing an n-type work function metal layer having a non-uniform thickness, and depositing a conductive layer over the n-type work function metal layer.

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