Integrated circuit and method of forming the same

Abstract

An integrated circuit includes a transistor including a pair of source / drain regions and a plurality of stacked first channels extending in a first lateral direction between the pair of first source / drain regions. The integrated circuit includes a pair of gate spacer layers adjacent to the first channels and a gate metal between the pair of gate spacer layers and between the first channels. The gate metal has a first length in the first lateral direction between the gate spacer layers and a second length in the first lateral direction between the first channels. The first length is greater than the second length.

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