Semiconductor device with high-k metal gate layer and method for preparing the same
TW202638778APending Publication Date: 2026-09-16NAN YA TECH
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Patent Information
- Application Number
- TW114125226
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-07
- Filing Date
- 2025-07-03
- Publication Date
- 2026-09-16
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Figure TWG2TA001076185_001 
Figure TWG2TA001076185_002 
Figure TWG2TA001076185_003
Abstract
A semiconductor device includes a fin structure disposed over a semiconductor substrate. The semiconductor device also includes a source / drain region disposed in the fin structure. The semiconductor device further includes a gate structure disposed over and extending into the fin structure. The gate structure is disposed adjacent to the source / drain region. The gate structure includes a high-k metal gate layer and a lower gate electrode layer disposed over the high-k metal gate layer.
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