Thin film transistor substrate
TW202638787APending Publication Date: 2026-09-16INNOLUX CORP
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Patent Information
- Application Number
- TW114109263
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-13
- Publication Date
- 2026-09-16
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Figure 00000000_0000_ABST
Abstract
A thin film transistor substrate is provided in this disclosure. The thin film transistor substrate includes a substrate, a first gate electrode, and a semiconductor layer. The first gate electrode is disposed on the substrate and includes a first side surface. The semiconductor layer is disposed on the first gate electrode and includes an active region, and the active region includes a second side surface. The second side surface is located adjacent to the first side surface, and a first distance between the first side surface and the second side surface is less than
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