Semiconductor device and methods of formation

Abstract

A capacitor structure included in a semiconductor device may include one or more electrode layers that contain materials that have low hydrogen absorption properties to achieve a low concentration of hydrogen in the capacitor structure. These materials enable the capacitor structure to be formed by low-temperature processes that are compatible with layers and / or structures of the semiconductor device, while enabling fast charging and discharging speeds to be achieved for the capacitor structure. Additionally and / or alternatively, one or more of the electrode layers of the capacitor structure may contain metal materials that have a high band gap, which reduces the likelihood of (and / or amount of) charge carrier tunneling. This enables a low current leakage to be achieved for the capacitor structure, which enables the capacitor structure to retain charge for longer durations with fewer charge refreshes (which reduces power consumption of the semiconductor device).

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