Method of modifying opening in material layer stack provided on substrate and ion processing tool

Abstract

A method of modifying an opening in a material layer provided on a substrate to achieve desired critical dimensions may include forming a plurality of openings in a material layer stack formed over a substrate, wherein each opening of the plurality of openings comprises a first side opposite a second side, a first end opposite a second end, and a set of connection areas between the first end and the first and second sides. The method may further include performing a first ion process on the material layer stack to modify one or more dimensions of the set of connection areas, wherein the first ion process comprises directing ions to the material layer stack at a first non-zero angle relative to a normal direction extending from a top surface of the material layer stack.

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