A semiconductor structure forming method

TW202638855APending Publication Date: 2026-09-16NAN YA TECH
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114119718
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-03
Filing Date
2025-05-26
Publication Date
2026-09-16

Smart Images

  • Figure TWG2TA001076146_001
    Figure TWG2TA001076146_001
  • Figure TWG2TA001076146_002
    Figure TWG2TA001076146_002
  • Figure TWG2TA001076146_003
    Figure TWG2TA001076146_003
Patent Text Reader

Abstract

A method for forming a semiconductor structure comprises: forming a photoresist layer over a hard mask structure; patterning the photoresist layer, wherein the patterned photoresist layer has a rough surface; conformally depositing a spacer over the patterned photoresist layer, wherein during depositing the spacer, the rough surface of the patterned photoresist layer is repaired; and performing an etching process to the hard mask structure by using the patterned photoresist layer and the spacer as an etch mask.
Need to check novelty before this filing date? Find Prior Art