Metal-containing byproduct removal from plasma chamber

Abstract

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development. After the photopatterning and pattern transfer etch process, the metal-containing photoresist material and the residual metal-containing resist material may be removed by exposure to a halide-containing gas.

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