Selective removal of metal-and-carbon-containing materials

Abstract

Exemplary etching methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A metal-and-carbon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting the substrate may oxidize at least a portion of the metal-and-carbon-containing material to form a metal-and-oxygen-containing material. The methods may include providing a halogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the metal-and-oxygen-containing material with the halogen-containing precursor. The contacting the metal-and-oxygen-containing material may etch the metal-and-oxygen-containing material.

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