Metal-encapsulated silicon oxide materials and their manufacturing methods

Abstract

The purpose of this invention is to provide a metal-encapsulated silicon oxide material and its manufacturing method. Compared with the previous method, the metal-encapsulated silicon oxide material maintains better adhesion between silicon oxide materials, inhibits the deterioration of the metal components of the conductor, has good conductivity, and has a longer service life. The metal-encapsulated silicon oxide material of the present invention comprises: a first silicon oxide material; a second silicon oxide material, which faces and overlaps the first silicon oxide material face-to-face; a conductor disposed between the first silicon oxide material and the second silicon oxide material; and a bonding portion, which continuously bonds at least the peripheral portion of the overlapping surfaces of the first silicon oxide material and the second silicon oxide material in a ring along the periphery; wherein the OH group content of the first silicon oxide material and the second silicon oxide material is 1000 ppm or less, the conductor is a thin film, foil, wire, plate or strip, and the conductor comprises one selected from the group consisting of Ir, Pt, Rh, Ru, Re and Mo, or comprises an alloy comprising at least one selected from the group thereof.

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