Method of forming semiconductor transistor structure, semiconductor device, and method of forming integrated circuit

Abstract

A semiconductor transistor mesa isolation structure and method of forming the same including a mesa isolation structure located between a first gate and a second gate, the mesa isolation structure including sidewalls latitudinally offset from each of the first gate and the second gate, and the mesa isolation structure extending through an interior of a barrier layer of the semiconductor transistor, and the mesa isolation structure formed with a dielectric material.

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