Semiconductor memory device and method for manufacturing semiconductor memory device

Abstract

One embodiment of a semiconductor memory device includes a stacked body, an interlayer insulating film, a plate-like portion, and a pillar portion. The stacked body has multiple conductive layers and multiple insulating layers. The stacked body has an upper portion and a lower portion. The multiple conductive layers include stepped portions. The stepped portions are processed into a stepped shape. The interlayer insulating film covers the stepped portions. The plate-like portion extends along a first direction and penetrates the stacked body along the stacking direction. The plate-like portion is formed intermittently along the first direction with intervals between it and the interrupted portions. The pillar portion is formed at the interrupted portions. The pillar portion penetrates the stacked body along the stacking direction and extends from the lower portion to the upper portion.

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