Semiconductor structure and manufacturing method of the same
TW202638951APending Publication Date: 2026-09-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114138937
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-08-14
- Filing Date
- 2025-10-09
- Publication Date
- 2026-09-16
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Figure TWG2TA001076306_001 
Figure TWG2TA001076306_002 
Figure TWG2TA001076306_003
Abstract
The present disclosure describes a semiconductor device having a two-step source or drain contact structure. The two-step source or drain contact structure includes a first part on a source or drain structure of a transistor, and a second part on the first part and extending laterally beyond the first part toward a source or drain structure of another transistor.
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