Semiconductor devices and methods for manufacturing semiconductor devices

Abstract

The semiconductor device of the embodiment includes: a first interlayer insulating film; a first lower layer wiring disposed on the first interlayer insulating film; a second lower layer wiring disposed on the first interlayer insulating film and adjacent to the first lower layer wiring; a second interlayer insulating film disposed on the first interlayer insulating film and having a through hole formed therein communicating with the upper part of the first lower layer wiring; a through hole wiring disposed in the through hole of the second interlayer insulating film and connected to the first lower layer wiring; and an air gap spacer formed between the inner surface of the through hole and at least the side surface of the through hole wiring, wherein the air gap spacer is at least located between the upper part of the through hole wiring and the upper part of the second lower layer wiring.

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