Semiconductor structure, method of forming the same, and electronic device including the same
TW202638970APending Publication Date: 2026-09-16MEDIATEK INC
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Patent Information
- Application Number
- TW114146942
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-10-29
- Filing Date
- 2025-12-01
- Publication Date
- 2026-09-16
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Figure TWG2TA001076585_001 
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Abstract
A semiconductor structure includes a first dielectric layer, a first metal layer, and a barrier layer. The first metal layer is disposed on the first dielectric layer. The barrier layer is on the upper surface and side surfaces of the first metal layer. The barrier layer includes a first via hole above the first metal layer. Moreover, the barrier layer is a nitrogen-containing layer.
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