Semiconductor devices and manufacturing methods thereof

Abstract

According to one embodiment, a semiconductor device includes: a lower substrate comprising a first substrate, a first insulating film disposed on the first substrate, a first bonding pad disposed within the first insulating film on the upper surface side of the first insulating film, and a first recess disposed within the first insulating film on the upper surface side of the first insulating film. The device further includes: an upper substrate disposed on and in contact with the lower substrate, comprising a second substrate, a second insulating film disposed under the second substrate, a second bonding pad disposed within the second insulating film on the lower surface side of the second insulating film, and a second recess disposed within the second insulating film on the lower surface side of the second insulating film and facing the first recess. The device further includes: a first member received within the first recess and the second recess.

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