Semiconductor device manufacturing method

Abstract

A method for manufacturing a semiconductor device capable of properly manufacturing a semiconductor device. The method for manufacturing a semiconductor device (MD) includes: alternatingly depositing a first layer (161) with a component whose extinction coefficient in the infrared field is greater than that of silicon and a second layer (162) with silicon oxide as the main component on a first wafer (SS) to form a laminated portion (160); forming a first element (MCA) and a first bonding electrode (PI1) on the first wafer; forming a second element (Tr) and a second bonding electrode (PI2) on a second wafer (SB); bonding the first wafer and the second wafer through the first bonding electrode and the second bonding electrode; and passing laser light through a first substrate (150) and irradiating the laminated portion to cause the laminated portion to crack.

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