Semiconductor structure and method of forming the same

Abstract

A method includes: forming a first device region including a first semiconductor substrate; forming a first interconnect structure over a first front side of the first semiconductor substrate, wherein the first device region and the first interconnect structure form a first semiconductor die; forming a second device region including a second semiconductor substrate; forming a second interconnect structure over a second front side of the second semiconductor substrate, wherein the second device region and the second interconnect structure form a second semiconductor die; flipping the second semiconductor die and bonding the first semiconductor die with the second semiconductor die at a bonding region between the first interconnect structure and the second interconnect structure; and forming a third interconnect structure on a backside of the first semiconductor substrate, wherein the of the third interconnect structure includes a capacitor between two adjacent metallization layers of the third interconnect structure.

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