Wafer processing systems and wafer processing methods

Abstract

This invention provides a wafer processing system and method for improving the accuracy of the closed zone in laser processing. The wafer processing system (20) is configured to perform a first laser processing that forms a laser processing mark on a first dicing kerf and a second laser processing that forms a laser processing mark on a second dicing kerf with the intersection of the first dicing kerf and the intersection portion of the first dicing kerf being designated as a closed zone. The wafer processing system (20) includes: a coaxial AF device (24) capable of detecting the edge position of a wafer (10); a relative movement mechanism (23) capable of relative movement between the wafer (10) and the coaxial AF device (24); and a control device (30) for controlling the various elements of the wafer processing system. The control device (30) acquires the pre-processing dimensions of the second dicing kerf before the first laser processing, acquires the post-processing dimensions of the second dicing kerf based on the edge position of the wafer (10) after the first laser processing, and corrects the closed zone based on the expansion amount calculated from the post-processing dimensions and the pre-processing dimensions.

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