Radiosensitive linear components, patterning methods and compounds

TW202639488APending Publication Date: 2026-10-01JSR CORPORATION
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Patent Information

Application Number
TW115109637
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-25
Filing Date
2026-03-16
Publication Date
2026-10-01

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Abstract

This invention provides a radiosensitive linear composition and a pattern forming method that can fully utilize sensitivity, CDU, LWR, pattern rectangularity, etch resistance, exposure latitude (EL), depth of focus (DOF), preservation stability before and after exposure, and development defect suppression during pattern formation. A radiosensitive linear composition comprises: a first radiosensitive linear acid generator, which generates an acid represented by formula (1) by irradiation with radiation; a second radiosensitive linear acid generator (which is different from the first radiosensitive linear acid generator), which generates an acid represented by formula (2) by irradiation with radiation; a polymer containing at least one structural unit; and a solvent. (In formula (1), Wa is a monovalent aliphatic group A, a monovalent aliphatic group B containing at least one of oxygen, halogen, and sulfur atoms, or a monovalent monocyclic aromatic group; the number of oxygen atoms in Wa is three or less; L1 is a divalent group represented by formulas (i) to (iv) below.)
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