Composition and method for forming layer on semiconductor substrate, vapor delivery vessel, and vapor deposition apparatus

TW202639574APending Publication Date: 2026-10-01ASM IP HLDG BV
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Patent Information

Application Number
TW115103079
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-30
Filing Date
2026-01-27
Publication Date
2026-10-01

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Abstract

A composition for forming a layer on a semiconductor substrate is provided. The composition comprising a deposition precursor comprising a central atom or ion (M) and at least one phosphinimide ligand (L1). Also provided is a method and a system for forming a layer on a semiconductor substrate using the composition.
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