Patterning process

Abstract

The present invention is a patterning process including the steps of: (i) forming a resist pattern on a support by using a resist film obtained from a resist composition containing a hypervalent iodine compound, a carboxy-group-containing compound, and a solvent; (ii) forming a pattern-reversal film on the support having the formed resist pattern by applying a material containing an organotitanium compound and a solvent; and (iii) removing the resist pattern by etching to form a reverse pattern. This can provide a patterning process including: forming a resist pattern by using a non-chemically amplified resist composition excellent in sensitivity and limiting resolution; and further reversing the pattern by using an organotitanium-compound-containing material having high etching resistance.

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