Compositions for forming a photoresist underlayer, a photoresist underlayer, a method for forming a photoresist pattern, and a method for manufacturing a semiconductor device.
TW202639651APending Publication Date: 2026-10-01NISSAN CHEM CORP
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Patent Information
- Application Number
- TW115109970
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-19
- Filing Date
- 2026-03-17
- Publication Date
- 2026-10-01
Abstract
The present invention provides a composition for forming a photoresist lower layer film, which contains a resin (G) and a solvent; the aforementioned resin (G) has a structural unit represented by a specific formula (1).
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